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Abstract: Three kinds of Aharonov-Bohm(AB)-type oscillation have been investigated
in triangular antidot lattice fabricated from a GaAs/AlGaAs two-dimensional
electron gas sample.
The oscillation periods of Altshuler-Aronov-Spivak (AAS) effect and
AB-type effect near zero magnetic field are determined by the unit cell area,
whereas those of AB-type oscillations in the quantum Hall plateau transition
regime are governed by the effective area of antidot.
The evolution of the high-field AB-type oscillation as a function of
gate voltage gives infomation on the profile of the self-consistent potential
associated with compressible edge channels formed around antidot.
The temperature dependences and decoherence mechanisms of the AAS and AB-type oscillations near zero magnetic field as well as the high-field AB-type oscillation are discussed.