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The amplitude V0 of unidirectional periodic potential modulation introduced by a surface grating into a two-dimensional electron gas (2DEG) formed at AlGaAs/GaAs heterointerface is measured as a function of electron density ne by analyzing commensurability oscillation of the magnetoresistance. The electron density is varied either by applying a bias to a metallic back gate or by illumination. The amplitude decreases with increasing density, with the rate |dV0/dne| roughly an order of magnitude larger for the former method. The result is interpreted in terms of the rate, dE1/d(δEc), of the change in the first subband level E1 in response to the variation of the conduction-band edge δEc above the heterointerface. The rate crucially depends on the thickness of the 2DEG.

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