Effect of low-temperature annealing on transport and magnetism of diluted magnetic semiconductor (Ga,Mn)As
Takashi Hayashi, Yoshiaki Hashimoto, Shingo Katsumoto and Yasuhiro Iye
accepted
Modify
Note: Appl. Phys. Lett. March 2001
We report improvements in the crystallinity of a III-V-based diluted magnetic semiconductor (Ga,Mn)As by heat treatment (annealing) after growth at comparatively low temperatures.
This method can be used to raise the Curie temperature to 100K without the need for severe optimization of growth conditions, as well as to adjust the material parameters to desired values.