Effect of low temperature annealing on the crystallinity of III-V based diluted magnetic semiconductors
Y. Hashimoto, T. Hayashi, S. Katsumoto and Y. Iye
Note: Presented in ICCG13.
Low-temperature annealing after molecular-beam epitaxial growth of III-V based diluted magnetic
semiconductors, (Ga,Mn)As and (In,Mn)As has been found to improve the crystallinity of the films.
That is, the Curie temperature and the conductivity are greatly enhanced.
This effect is probably due to the removal of excess As atoms which passivate doped Mn acceptors.
The present method provides a way for reproducible systematic studies of these materials.