Magnetization dependent current rectification in (Ga,Mn)As magnetic tunnel junctions
Yoshiaki Hashimoto, Hiroaki Amano, Yasuhiro Iye, Shingo Katsumoto
APEX 4 063004 (2011) Modify
We have found that the current rectification effect in triple layer (double barrier) (Ga,Mn)As magnetic tunnel junctions strongly depends on the magnetization alignment.
The direction as well as the amplitude of the rectification changes with the alignment,
which can be switched by bi-directional spin-injection with very small threshold currents.
A possible origin of the rectification is energy dependence of the density of states around
the Fermi level. Tunneling density of states in (Ga,Mn)As shows characteristic dip around zero-bias indicating
formation of correlation gap, the asymmetry of which would be a potential source of the energy dependent
density of states.